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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB521 DESCRIPTION *With TO-220 package *Low collector saturation voltage APPLICATIONS *High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -8 -5 43 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA , IB=0 IE=-1mA , IC=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-50V; IE=0 VEB=-8V; IC=0 IC=-2.5A ; VCE=-2V IC=-0.2A ; VCE=-5V 50 7 MIN -60 -8 2SB521 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V -0.4 -1.2 -1 -1 V V A A MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB521 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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